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LPE1O6A


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SILICON CARBIDE EPITAXIAL REACTOR PE1O6


GENERAL DESCRIPTION

- Single wafer 150mm epitaxy reactor

- Hot wall inductive heating

- Three-zone gas injection system

- Load lock for inert purge between runs

- Smallest footprint


UNMATCHED PROCESS FLEXIBILITY

- Thin , thick and super thick epitaxial layers

- Multilayer (p and n) in one run

- Reduced pressure process capability


THROUGHPUT

- Hi temperature robotized handling

- Industry's shortest heat up / cool down

- High growth rate

- Lowest CoO

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