SILICON CARBIDE EPITAXIAL REACTOR PE1O8 

GENERAL DESCRIPTION
- Single wafer up to 200mm epitaxy reactor
- Hot wall inductive heating
- Three-zone gas injection system
- Load lock for inert purge between runs
- Smallest footprint

UNMATCHED PROCESS FLEXIBILITY
- Thin , thick and super thick epitaxial layers
- Multilayer (p and n) in one run
- Reduced pressure process capability

THROUGHPUT
- Hi temperature robotized handling
- Industry's shortest heat up / cool down
- High growth rate
- Lowest CoO